This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1218G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819G
■ Features
■ Package
• Code
SMini3-F2
• Marking Symbol: B
• Pin Name
1. Base
• High forward current transfer ratio hFE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−45
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
−45
V
−7
V
Collector current
IC
ICP
PC
Tj
−100
−200
150
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−45
−45
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
−100
460
µA
µA
ICEO
hFE
160
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.3 − 0.5
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
210 to 340
BR
S
290 to 460
BS
No-rank
160 to 460
B
hFE
160 to 260
BQ
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: April 2007
SJC00352AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218G
NF IE
NF IE
h Parameter IE
6
5
4
3
2
1
20
VCB = −5 V
VCE = −5 V
f = 270 Hz
Ta = 25°C
VCB = −5 V
Rg = 50 kΩ
f = 1 kHz
Ta = 25°C
Rg = 2 kΩ
Ta = 25°C
hfe
16
12
8
100
10
1
hoe (µS)
f = 100 Hz
1 kHz
10 kHz
hie (kΩ)
4
hre (× 10−4
)
0
0.01
0
0.1
0.1
1
10
1
10
0.1
1
10
(
)
Emitter current IE mA
(
)
(
)
Emitter current IE mA
Emitter current IE mA
h Parameter VCE
hfe
100
hoe (µS)
10
hre (× 10−4
)
hie (kΩ) IE = 2 mA
f = 270 Hz
Ta = 25°C
1
−1
−10
−100
(
)
V
Collector-emitter voltage VCE
SJC00352AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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